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www.irf.com 1 04/20/10 irf5801pbf smps mosfet hexfet power mosfet high frequency dc-dc converters benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current lead-free halogen-free v dss r ds(on) max i d 200v 2.2 0.6a parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 0.6 i d @ t a = 70c continuous drain current, v gs @ 10v 0.48 a i dm pulsed drain current 4.8 p d @t a = 25c power dissipation 2.0 w linear derating factor 0.016 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 9.6 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 tsop-6 symbol parameter typ. max. units r ja junction-to-ambient ??? 62.5 c/w thermal resistance pd-95474b
2 www.irf.com parameter typ. max. units e as single pulse avalanche energy ??? 9.9 mj i ar avalanche current ??? 0.6 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 0.36a, v gs = 0v t rr reverse recovery time ??? 45 ??? ns t j = 25c, i f = 0.36a q rr reverse recoverycharge ??? 54 ??? nc di/dt = 100a/s diode characteristics 1.8 4.8 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.26 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 2.2 ? v gs = 10v, i d = 0.36a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current parameter min. typ. max. units conditions g fs forward transconductance 0.44 ??? ??? s v ds = 50v, i d = 0.36a q g total gate charge ??? 3.9 ??? i d = 0.36a q gs gate-to-source charge ??? 0.8 ??? nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 2.2 ??? v gs = 10v t d(on) turn-on delay time ??? 6.5 ??? v dd = 100v t r rise time ??? 8.0 ??? i d = 0.36a t d(off) turn-off delay time ??? 8.8 ??? r g = 53 ? t f fall time ??? 19 ??? v gs = 10v c iss input capacitance ??? 88 ??? v gs = 0v c oss output capacitance ??? 18 ??? v ds = 25v c rss reverse transfer capacitance ??? 6.3 ??? pf ? = 1.0mhz c oss output capacitance ??? 102 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 8.4 ??? v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance ??? 26 ??? v gs = 0v, v ds = 0v to 160v dynamic @ t j = 25c (unless otherwise specified) ns
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 0.6a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 20s pulse width tj = 25c vgs top 15.0v 12.0v 10.0v 8.0v 7.5v 7.0v 6.5v bottom 6.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 20s pulse width tj = 150c vgs top 15.0v 12.0v 10.0v 8.0v 7.5v 7.0v 6.5v bottom 6.0v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1 2 3 4 5 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 0.36a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.01 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 v ds , drain-to-source voltage (v) 0 40 80 120 160 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + -
6 www.irf.com 25 50 75 100 125 150 0 5 10 15 20 25 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.4a 0.7a 0.9a fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 012345 i d , drain current ( a ) 0.000 2.000 4.000 6.000 8.000 10.000 12.000 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 10v 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 v gs, gate -to -source voltage (v) 1.500 1.750 2.000 2.250 2.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.6a
www.irf.com 7

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" note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 27mh r g = 25 ? , i as = 0.36a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10sec. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 0.36a, di/dt 93a/s, v dd v (br)dss , t j 150c. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010

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